Vol. 2 No. 1 (2024)

Open Access

Article

Article ID: 461

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

by P. R. Sekhar Reddy

Materials Technology Reports, Vol.2, No.1, 2024; 1326 Views, 179 PDF Downloads

In this study, Zr-doped HfO 2 (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO 2 and ZrO 2 cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~10 3 A, and as well as good endurance (300 cycles) and retention (>10 3 s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

Open Access

Article

Article ID: 483

Electrochemical performance of Pr0.6Sr0.4Fe0.8Co0.2O3−δ as potential cathode material for IT-SOFC

by M. Shamshi Hassan

Materials Technology Reports, Vol.2, No.1, 2024; 146 Views, 97 PDF Downloads

Solid oxide fuel cells (SOFCs) are renowned for being effective energy sources that have potential to influence how energy is developed in future. SOFCs operate at low temperatures provides different benefits for widespread commercialization. In the present study a perovskite material Pr 0.6 Sr 0.4 Fe 0.8 Co 0.2 O 3−δ (PSFCo) was investigated as cathode for SOFC in intermediate temperature range. Glycine nitrate process was used for the preparation of the samples. PSFCo exhibited cubic structure having small particle size (100–200 nm). The electrical conductivity of the PSFCo was measured as function of temperature up to 850 ℃. The sample displayed maximum electrical conductivity of 370 Scm −1 at around 550–600 ℃. The polarization behavior of PSFCo was calculated by means of AC impedance with Sm 0.8 Ce 0.2 O 2 (SDC) as electrolyte. The value of area specific resistance (ASR) was calculated as 0.146 Ωcm 2 at 800 ℃ and 0.248 Ωcm 2 at 700 ℃.

Open Access

Article

Article ID: 1603

Performance assessment of particle board developed from organic wastes using polymer matrix

by Joseph Abutu, Tsotsi Rikwen Tsoji, Areo Stephen, Aliyuda Dedan Araye, Sunday Albert Lawal, Ayuba Kitaka Rimamtaatang

Materials Technology Reports, Vol.2, No.1, 2024; 490 Views, 46 PDF Downloads

In this work, sugarcane bagasse and rice husk were used as filler material for the production of agro-based particle board along with low-density polyethylene and coconut shell, with the aim of investigating the effects of varying compositions of constituents on the performance of the developed composite using constant process parameters of moulding pressure (10 MPa), moulding temperature (140 ℃), curing time (10 min) and heat treatment time (1 h). Experimental design was conducted using box-Behnken design (L1533) while multi-response optimization was carried out using grey relational analysis (GRA). The experimental results revealed that changes in percentage composition affect the performance of the composite, and the multi-response optimal performance of the developed bagasse-based particle board (BPB) and rice husk-based particle board (RPB) can be achieved with bagasse or rice husk (30 wt%), coconut shell (30 wt%), and low-density polyethylene (40 wt%). The results of the analysis of variance showed that the performance of the two particle boards is most influenced by the presence of low-density polyethylene (LDPE). Finally, compared to rice husk, bagasse can effectively serve as a preferred substitute for wood in the production of particle board.

Open Access

Article

Article ID: 1556

The negative differential resistance of nitrogen implanted TiO2

by Chun-Ming Liu

Materials Technology Reports, Vol.2, No.1, 2024; 20 Views, 24 PDF Downloads

The microstructure and negative differential resistance (NDR) effect of nitrogen implanted rutile TiO 2 were investigated by measuring the XPS, Raman spectra and current voltage curves. It was found that the light illumination has large influence on the NDR effect. Under the illumination of 60 mW laser light, a large NDR with a small electric field (1250 V/cm) is obtained. This electric field is about three orders smaller than that reported in literature (1×10 6 V/cm). The electric field induced tunneling is the possible mechanism of electric transport at higher field region. The NDR is thought to be related to the light and nitrogen dopant induced reaction including the destroying of water, the scavenging of electron, and the surface oxidation transform of non-stoichiometric TiO 2− x to stoichiometric insulating state. The results of this paper are not only useful in understanding the mechanism of NDR, but also useful in providing an effective method in manipulation NDR.

Open Access

Editorial

Article ID: 460

What lower the development of nanodrug?

by Chong Qiu

Materials Technology Reports, Vol.2, No.1, 2024; 92 Views, 74 PDF Downloads

Only a few nanomedicines have entered clinical application after over a decade and billions of dollars of investments in nanoscience and nanotechnology around the world. So, what lower the development of nanodrug? Recently, at our recent Editorial and Editorial Advisory Board meeting, we asked ourselves to address these questions and accelerate the development of nano pharmaceuticals. We will work with leaders in the area of drug supply to share our experiences and compare efforts around the world.