The negative differential resistance of nitrogen implanted TiO2

Chun-Ming  Liu

doi:10.59400/mtr.v2i1.1556

The negative differential resistance of nitrogen implanted TiO2

Chun-Ming Liu School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China

Article ID: 1556

5370 Views, 3023 PDF Downloads

DOI: https://doi.org/10.59400/mtr.v2i1.1556

Keywords: negative differential resistance; nitrogen implanted TiO2; light assistance

Abstract

The microstructure and negative differential resistance (NDR) effect of nitrogen implanted rutile TiO₂ were investigated by measuring the XPS, Raman spectra and current voltage curves. It was found that the light illumination has large influence on the NDR effect. Under the illumination of 60 mW laser light, a large NDR with a small electric field (1250 V/cm) is obtained. This electric field is about three orders smaller than that reported in literature (1×10⁶ V/cm). The electric field induced tunneling is the possible mechanism of electric transport at higher field region. The NDR is thought to be related to the light and nitrogen dopant induced reaction including the destroying of water, the scavenging of electron, and the surface oxidation transform of non-stoichiometric TiO_2−x to stoichiometric insulating state. The results of this paper are not only useful in understanding the mechanism of NDR, but also useful in providing an effective method in manipulation NDR.

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Published

2024-04-25

How to Cite

Liu, C.-M. (2024). The negative differential resistance of nitrogen implanted TiO2. Materials Technology Reports, 2(1), 1556. https://doi.org/10.59400/mtr.v2i1.1556

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