Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

P. R. Sekhar Reddy

doi:10.59400/mtr.v2i1.461

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

P. R. Sekhar Reddy Semiconductor Laboratory, SASTRA-MHI Training Center, SASTRA Deemed University

Article ID: 461

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DOI: https://doi.org/10.59400/mtr.v2i1.461

Keywords: non-volatile memory, RRAM, resistive switching, atomic layer deposition, charge transport mechanism

Abstract

In this study, Zr-doped HfO₂ (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO₂and ZrO₂ cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~10³ A, and as well as good endurance (300 cycles) and retention (>10³ s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

References

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Published

2024-01-08

How to Cite

Reddy, P. R. S. (2024). Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications. Materials Technology Reports, 2(1), 461. https://doi.org/10.59400/mtr.v2i1.461

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