Materials Technology Reports

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

P. R. Sekhar Reddy — 2024-01-08

In this study, Zr-doped HfO₂ (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO₂and ZrO₂ cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~10³ A, and as well as good endurance (300 cycles) and retention (>10³ s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

Electrochemical performance of Pr0.6Sr0.4Fe0.8Co0.2O3−δ as potential cathode material for IT-SOFC

M. Shamshi Hassan — 2024-02-29

Solid oxide fuel cells (SOFCs) are renowned for being effective energy sources that have potential to influence how energy is developed in future. SOFCs operate at low temperatures provides different benefits for widespread commercialization. In the present study a perovskite material Pr_0.6Sr_0.4Fe_0.8Co_0.2O_3−δ (PSFCo) was investigated as cathode for SOFC in intermediate temperature range. Glycine nitrate process was used for the preparation of the samples. PSFCo exhibited cubic structure having small particle size (100–200 nm). The electrical conductivity of the PSFCo was measured as function of temperature up to 850 ℃. The sample displayed maximum electrical conductivity of 370 Scm⁻¹ at around 550–600 ℃. The polarization behavior of PSFCo was calculated by means of AC impedance with Sm_0.8Ce_0.2O₂ (SDC) as electrolyte. The value of area specific resistance (ASR) was calculated as 0.146 Ωcm² at 800 ℃ and 0.248 Ωcm² at 700 ℃.

What lower the development of nanodrug?

Chong Qiu — 2024-01-08

Only a few nanomedicines have entered clinical application after over a decade and billions of dollars of investments in nanoscience and nanotechnology around the world. So, what lower the development of nanodrug? Recently, at our recent Editorial and Editorial Advisory Board meeting, we asked ourselves to address these questions and accelerate the development of nano pharmaceuticals. We will work with leaders in the area of drug supply to share our experiences and compare efforts around the world.